Dielectric element and method for manufacturing the same

The invention relates to a method for manufacturing a capacitor including the steps of: preparing a lower electrode; forming a dielectric on the lower electrode to fabricate a first laminated structure; annealing the first laminated structure; forming an upper electrode on a dielectric film to fabri...

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Bibliographic Details
Main Author KATOH TOMOHIKO,HORINO KENJI
Format Patent
LanguageEnglish
Published 06.06.2007
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Summary:The invention relates to a method for manufacturing a capacitor including the steps of: preparing a lower electrode; forming a dielectric on the lower electrode to fabricate a first laminated structure; annealing the first laminated structure; forming an upper electrode on a dielectric film to fabricate a second laminated structure; and annealing the second laminated structure under a reduced pressure atmosphere at a temperature of 150 DEG C or higher.
Bibliography:Application Number: CN200610163302