Interlinkage structure and its forming method

Device and method of fabricating device. The device includes a dual damascene line having a metal line and a via, and a redundant liner arranged to divide the metal line. The method includes forming a trench in a metal stripe of a dual damascene line, depositing a barrier layer in the trench, and fi...

Full description

Saved in:
Bibliographic Details
Main Author AGARWALA BIRENDRA N.,NGUYEN DU BINH,RATHORE HAZARA S
Format Patent
LanguageEnglish
Published 23.05.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Device and method of fabricating device. The device includes a dual damascene line having a metal line and a via, and a redundant liner arranged to divide the metal line. The method includes forming a trench in a metal stripe of a dual damascene line, depositing a barrier layer in the trench, and filling a remainder of the trench with metal.
Bibliography:Application Number: CN200610159881