Silicon electrode plate having excellent durability for plasma etching

The invention provides a silicon electrode plate having excellent durability for plasma etching is provided. The electrode plate is made of a silicon single crystal containing boron by an atomic ratio of 3-11ppba and phosphorus or arsenic or both by an atomic ratio of 0.5-6ppba in total.

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Bibliographic Details
Main Author FUJIWARA HIDEKI,IKEZAWA KAZUHIRO,TAGUCHI HIROAKI,IWAMOTO NAOFUMI,ISHII TOSHINORI,KOMEKYU TAKASHI
Format Patent
LanguageEnglish
Published 16.05.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PLASMA TECHNIQUE
PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS
PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS
SEMICONDUCTOR DEVICES
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Summary:The invention provides a silicon electrode plate having excellent durability for plasma etching is provided. The electrode plate is made of a silicon single crystal containing boron by an atomic ratio of 3-11ppba and phosphorus or arsenic or both by an atomic ratio of 0.5-6ppba in total.
Bibliography:Application Number: CN2005810006