Field effect transistor, method for manufacturing the same and electronic device using the field effect transistor

A field-effect transistor includes a semiconductor layer ( 14 ), a source electrode ( 15 ) and a drain electrode ( 16 ) electrically connected to the semiconductor layer ( 14 ), and a gate electrode ( 12 ) for applying an electric field to the semiconductor layer ( 14 ) between the source electrode...

Full description

Saved in:
Bibliographic Details
Main Author TAKEUCHI TAKAYUKI,KAWASHIMA TAKAHIRO,SAITOH TOHRU,OKUZAWA TOMOHIRO,KITAOKA YASUO
Format Patent
LanguageEnglish
Published 18.04.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A field-effect transistor includes a semiconductor layer ( 14 ), a source electrode ( 15 ) and a drain electrode ( 16 ) electrically connected to the semiconductor layer ( 14 ), and a gate electrode ( 12 ) for applying an electric field to the semiconductor layer ( 14 ) between the source electrode ( 15 ) and the drain electrode ( 16 ). The semiconductor layer ( 14 ) contains an organic semiconductor material and a plurality of thin wires made of an inorganic semiconductor.
Bibliography:Application Number: CN200580014058