Semiconductor device

Provided is a method capable of forming a polycrystalline silicon resistor with preferable ratio accuracy so as to design a resistor circuit with high accuracy. In the method, a length of a low concentration impurity region constituting the polycrystalline silicon resistor in a longitudinal directio...

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Bibliographic Details
Main Author TSUKAMOTO AKIKO,HARADA HIROFUMI
Format Patent
LanguageEnglish
Published 31.01.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a method capable of forming a polycrystalline silicon resistor with preferable ratio accuracy so as to design a resistor circuit with high accuracy. In the method, a length of a low concentration impurity region constituting the polycrystalline silicon resistor in a longitudinal direction is varied in accordance with an occupying area of a metal portion overlapping the low concentration impurity region, thereby correcting a variation in resistance without varying an external shape and the occupying area of the resistor.
Bibliography:Application Number: CN200610128558