CMOS device with metal and silicide gate electrodes and a method for making it

A semiconductor device and a method for forming it are described. The semiconductor device comprises a metal NMOS gate electrode that is formed on a first part of a substrate, and a silicide PMOS gate electrode that is formed on a second part of the substrate.

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Bibliographic Details
Main Author BRASK JUSTIN K.,DOCZY MARK L.,KAVALIEROS JACK,METZ MATTHEW V.,BARNS CHRIS E.,SHAH UDAY,DATTA SUMAN,THOMAS CHRISTOPHER D.,CHAU ROBERT S
Format Patent
LanguageEnglish
Published 24.01.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device and a method for forming it are described. The semiconductor device comprises a metal NMOS gate electrode that is formed on a first part of a substrate, and a silicide PMOS gate electrode that is formed on a second part of the substrate.
Bibliography:Application Number: CN200480039412