Vertical pnp transistor and method of making same

The present invention relates to a device structure located in a semiconductor substrate and containing high performance vertical NPN and PNP transistors. Specifically, the vertical PNP transistor has an emitter region, and the vertical NPN transistor has an intrinsic base region. The emitter region...

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Bibliographic Details
Main Author GRAY PETER B.,VOEGELI BENJAMIN T
Format Patent
LanguageEnglish
Published 24.01.2007
Subjects
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