Vertical pnp transistor and method of making same
The present invention relates to a device structure located in a semiconductor substrate and containing high performance vertical NPN and PNP transistors. Specifically, the vertical PNP transistor has an emitter region, and the vertical NPN transistor has an intrinsic base region. The emitter region...
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Main Author | |
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Format | Patent |
Language | English |
Published |
24.01.2007
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Subjects | |
Online Access | Get full text |
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