Method for machining a semiconductor wafer on both sides in a carrier, carrier, and a semiconductor wafer produced by the method

The method involves guiding a semiconductor wafer (W) into a recess of a rotor plate. Thickness of the semiconductor wafer is reduced to a target thickness by simultaneously removing material from a front side and a back side of the semiconductor wafer. The semiconductor wafer is processed, until it...

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Bibliographic Details
Main Author SCHMOLKE RUEDIGER,BUSCHHARDT THOMAS,HEIER GERHARD,WENSKI GUIDO
Format Patent
LanguageEnglish
Published 24.01.2007
Subjects
BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:The method involves guiding a semiconductor wafer (W) into a recess of a rotor plate. Thickness of the semiconductor wafer is reduced to a target thickness by simultaneously removing material from a front side and a back side of the semiconductor wafer. The semiconductor wafer is processed, until it is thinner than the rotor plate and thicker than an intermediate layer (2), with which the recess of the rotor plate is lined for the protection of the semiconductor wafer.
Bibliography:Application Number: CN200610106117