Semiconductor device and production method thereof

Disclosed are semiconductor device and method for fabricating the same that is able to suppress a short channel effect and improve carrier mobility. In the method, trenches are formed in a silicon substrate corresponding to a source region and a drain region. When epitaxially growing p-type semicond...

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Bibliographic Details
Main Author SHIMAMUNE YOSUKE,OHTA HIROYUKI,HATADA AKIYOSHI,KATAKAMI AKIRA,TAMURA NAOYOSHI
Format Patent
LanguageEnglish
Published 27.12.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed are semiconductor device and method for fabricating the same that is able to suppress a short channel effect and improve carrier mobility. In the method, trenches are formed in a silicon substrate corresponding to a source region and a drain region. When epitaxially growing p-type semiconductor mixed crystal layers to fill up the trenches, the surfaces of the trenches are demarcated by facets, and extended portions of the semiconductor mixed crystal layers are formed between bottom surfaces of second side wall insulating films and a surface of the silicon substrate, and extended portion are in contact with a source extension region and a drain extension region.
Bibliography:Application Number: CN20051108860