Method of forming organic semiconductor layer pattern

A donor substrate and a method of forming an organic semiconductor layer pattern using the donor substrate, whereby a donor substrate is formed using an organic semiconductor precursor having a thermally decomposable substituent through a wet process, the organic semiconductor precursor substrate in...

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Main Author PARK JONG-JIN,NOH TAE-YONG,KIM MYEONG-SUK,LEE SUNG-HUN,JEONG EUN-JEONG,SHIN DONG-WOO,PU LYONG-SUN
Format Patent
LanguageEnglish
Published 20.12.2006
Subjects
ELECTRICITY
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Summary:A donor substrate and a method of forming an organic semiconductor layer pattern using the donor substrate, whereby a donor substrate is formed using an organic semiconductor precursor having a thermally decomposable substituent through a wet process, the organic semiconductor precursor substrate in the donor substrate is transferred to a receptor substrate as a pattern and heated, and thus is changed into an organic semiconductor. As a result, an organic semiconductor layer pattern is obtained. The method can be used in the manufacture of various devices such as organic light emitting diode and organic thin film transistor. A low-molecular weight organic semiconductor layer pattern can be formed through a wet process, not through deposition. Thus, using the method, a flat display device can be conveniently manufactured at low cost.
Bibliography:Application Number: CN200610092596