Radio frequency switching circuit and semiconductor device including the same

• Main Author: MIYAGI MASASHI,NAKATSUKA TADAYOSHI
• Format: Patent
• Language: English
• Published: 29.11.2006
• Subjects: BASIC ELECTRONIC CIRCUITRY; ELECTRICITY; PULSE TECHNIQUE

A radio frequency switching circuit having improved input/output power characteristics is provided. The circuit includes basic switching sections each including a plurality of FETs 13 a- 13 d, 14 a- 14 d, 11 a- 11 d or 12 a- 12 d connected in series. The basic switching sections are respectively provided between an input/output terminal 1 and the ground, between an input/output terminal 3 and the ground, between the input terminals 1 and 2, and between the input terminals 2 and 3. The circuit also includes a plurality of resistors 43 a- 43 d, 44 a- 44 d, 41 a- 41 d and 42 a- 42 d, each having one terminal connected to a drain electrode of a corresponding FET and the other terminal connected to a source electrode of the corresponding FET. A resistor connected between the drain and source electrodes of an FET, among the FETs included in a basic switching section in an OFF state, closer to the input/output terminal to which a signal is inputted has a smaller resistance value.