Non-volatility memory and its operation method

A nonvolatile memory body is prepared as setting gate electrode on substrate and storage unit two side walls of gate electrode, setting auxiliary gate electrode at two sides of gate electrode in adjacent to storage unit on side wall of gate electrode. It features that the first auxiliary gate electr...

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Bibliographic Details
Main Author ZHENGXING,LIAN XU
Format Patent
LanguageEnglish
Published 29.11.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A nonvolatile memory body is prepared as setting gate electrode on substrate and storage unit two side walls of gate electrode, setting auxiliary gate electrode at two sides of gate electrode in adjacent to storage unit on side wall of gate electrode. It features that the first auxiliary gate electrode is share-used by two adjacent memory cells, gate electrode and storage unit as well as auxiliary gate electrode are electric -isolated.
Bibliography:Application Number: CN200510073020