Junction forming method and object to be processed and formed by using same

A method for forming a shallow junction with high accuracy and with a high throughput in a simple step. A state of the surface of a substrate suitable for the wavelength of an electromagnetic wave to be applied is set up. Thereafter, the electromagnetic wave is applied to electrically activate impur...

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Bibliographic Details
Main Author SASAKI YUICHIRO,JIN CHENG-GUO,MIZUNO BUNJI
Format Patent
LanguageEnglish
Published 22.11.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming a shallow junction with high accuracy and with a high throughput in a simple step. A state of the surface of a substrate suitable for the wavelength of an electromagnetic wave to be applied is set up. Thereafter, the electromagnetic wave is applied to electrically activate impurities so that the excitation energy is efficiently absorbed in an impurity thin film. Thus, a shallow junction is efficiently formed.
Bibliography:Application Number: CN2004829733