Self-aligned magnetic clad write line and method thereof

A self-aligned magnetic clad bit line structure (274) for a magnetoresistive memory element (240a) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure (274) extends within a trench (258) and includes a conductive material (250), magnetic cladding side...

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Bibliographic Details
Main Author JONES ROBERT E.,BARRON CAROLE C.,LUCKOWSKI ERIC D.,MELNICH BRADLEY M
Format Patent
LanguageEnglish
Published 15.11.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A self-aligned magnetic clad bit line structure (274) for a magnetoresistive memory element (240a) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure (274) extends within a trench (258) and includes a conductive material (250), magnetic cladding sidewalls (262) and a magnetic cladding cap (252). The magnetic cladding sidewalls (262) at least partially surround the conductive material (264) and the magnetic cladding cap (252) is at least substantially recessed within the trench with respect to the top of the trench.
Bibliography:Application Number: CN200610005094