Transistor including metal-insulator transition material and method of manufacturing the same

A transistor including a metal-insulation transition material and a method of manufacturing the same. The transistor including a metal-insulator transition material may include a substrate, a insulation layer formed on the substrate, a source region and a drain region separately formed from each oth...

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Bibliographic Details
Main Authors CHOI YANG-KYU, CHO CHOONG-RAE, CHO SUNG-IL, YOO IN-KYEONG
Format Patent
LanguageChinese
English
Published 18.04.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A transistor including a metal-insulation transition material and a method of manufacturing the same. The transistor including a metal-insulator transition material may include a substrate, a insulation layer formed on the substrate, a source region and a drain region separately formed from each other on the insulation layer, a tunneling barrier layer formed on at least one surface of the source region and the drain region, a metal-insulator transition material layer formed on the tunneling barrier layer and the insulation layer, a dielectric layer stacked on the metal-insulator transition material layer, and a gate electrode layer formed on the dielectric layer. The metal-insulation transition material is transformed into insulator according to the potential difference between the source region and the drain region, or vice versa.
Bibliography:Application Number: CN200610081819