Pattern forming apparatus and method of manufacturing pattern forming apparatus

Using a silicon single crystal with (100) plane orientation as a base material, a pectinate portion having a slope portion and a patterning material guiding groove is formed through photolithography process. A liquid reservoir for keeping a patterning material common to tooth portions of the pectina...

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Bibliographic Details
Main Author OKUMURA KATSUYA,YABE MANABU,KOYAGI YASUYUKI,HARADA MUNEO,KIYOMOTO TOMOFUMI
Format Patent
LanguageEnglish
Published 08.11.2006
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Summary:Using a silicon single crystal with (100) plane orientation as a base material, a pectinate portion having a slope portion and a patterning material guiding groove is formed through photolithography process. A liquid reservoir for keeping a patterning material common to tooth portions of the pectinate portion is formed in the same step as a step for forming the guiding grooves. In forming slope portion, anisotropic wet etching allows easy and accurate formation of a slope portion with (111) plane orientation to (100) plane orientation, by taking advantage of differences in speed due to the plane orientations. In addition, by forming a groove portion using anisotropic dry etching, the patterning material guiding groove having a perpendicular sidewall reaching the slope portion may be formed at high accuracy. A pattern forming apparatus with high accuracy and low cost is provided.
Bibliography:Application Number: CN2006178521