Impurity introducing method, impurity introducing apparatus, and electronic device produced by using those

The present invention realizes impurity introduction without causing increase in substrate temperature. The physical properties of lattice defects formed during the impurity introduction step are optically measured and controlled so that they become optimum for the following step. An impurity introd...

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Bibliographic Details
Main Author JIN CHENG-GUO,SASAKI YUICHIRO,MIZUNO BUNJI
Format Patent
LanguageEnglish
Published 01.11.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention realizes impurity introduction without causing increase in substrate temperature. The physical properties of lattice defects formed during the impurity introduction step are optically measured and controlled so that they become optimum for the following step. An impurity introducing method comprises a step for introducing an impurity into the surface of a solid base, a step for measuring optical characteristics of the region where the impurity is introduced, a step for determining annealing conditions according to the measured optical characteristics of the impurity-introduced region, and a step for annealing the impurity-introduced region under the thus-determined annealing conditions.
Bibliography:Application Number: CN2004827712