Method for inspecting pipe seam defect

The method comprises: providing a semiconductor substrate on which there are an active region and an insulation region; forming multi semiconductor members on the said semiconductor substrate, and depositing a dielectric layer on the substrate and the multi semiconductor members; forming a first and...

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Bibliographic Details
Main Author RUXING,WU JI
Format Patent
LanguageEnglish
Published 01.11.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:The method comprises: providing a semiconductor substrate on which there are an active region and an insulation region; forming multi semiconductor members on the said semiconductor substrate, and depositing a dielectric layer on the substrate and the multi semiconductor members; forming a first and a second contacting plugs on the substrate for respectively connecting the active region and the insulation region; irradiating the first and second contact plugs by using electron beam to accumulate electric charge on the second contact plug being connected to the said insulation region; deciding if there is tube seam defect between two said contact plugs by comparing the brightness respectively generated from both contact plugs.
Bibliography:Application Number: CN2005165582