Thin film transistor and method of fabricating the same

• Main Author: CHOI DAE C.,CHOI BYOUNG D.,IM CHOONG Y
• Format: Patent
• Language: English
• Published: 01.11.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A thin film transistor (TFT) and a method of fabricating the same, in which a fabrication process is simplified and damage to a gate insulating layer is decreased. The method of fabricating the TFT includes forming at least one buffer layer on a substrate, forming a first semiconductor layer formed on the buffer layer and a second semiconductor layer by depositing a semiconductor doped with a dopant on the first semiconductor layer, patterning the second semiconductor layer to form source and drain regions, forming a gate insulating layer on the source and drain regions, and forming a gate electrode on the gate insulating layer.