Low-resistance tunnel magnetoresistive effect element, and manufacturing method, testing method and testing apparatus for the element

A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many electric charge sites. The electric charge sites density n and the mobility mu of electrons trapped due...

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Main Author SARUKI SHUNJI,INAGE KENJI,KUWASHIMA TETSUYA,KIYONO HIROSHI,TAGAMI KATSUMICHI,FUKUDA KAZUMASA,KOHNO MASAHIDE
Format Patent
LanguageEnglish
Published 18.10.2006
Subjects
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
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Summary:A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many electric charge sites. The electric charge sites density n and the mobility mu of electrons trapped due to the electric charge sites satisfy a relationship expressed by: 0<(Ns1-1-ns2-1)-1.(mu0-mu).(nmu)-1<0.2, WHERE Ns1 and ns2 are densities of tunnel electrons when an element resistance is a minimum and maximum respectively during reading signals and mu0 is the mobility of electrons when not trapped.
Bibliography:Application Number: CN200610072053