Structure and method for metal replacement gate of high performance device

A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure (260) is first formed on an etch stop layer (250) provided on a semiconductor substrate (240). A pair of spacers (400) is provided on sidewalls of the sacrificial gate structure...

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Bibliographic Details
Main Author STEEGEN AN L.,KU VICTOR,WONG KWONG HON,LI YING,NARAYANAN VIJAY,CABRAL CYRIL JR.,JAMISON PAUL
Format Patent
LanguageEnglish
Published 11.10.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure (260) is first formed on an etch stop layer (250) provided on a semiconductor substrate (240). A pair of spacers (400) is provided on sidewalls of the sacrificial gate structure (300). The sacrificial gate structure (300) is then removed, forming an opening (600). Subsequently, a metal gate (1000) including an first layer (700) of metal such as tungsten, a diffusion barrier (800) such as titanium nitride, and a second layer (900) of metal such as tungsten is formed in the opening (600) between the spacers (400).
Bibliography:Application Number: CN200480025650