Silicon nano wires, semiconductor device including the same, and method of manufacturing the silicon nano wires

• Main Author: CHOI BYOUNG-LYONG,LEE EUN-KYUNG,PARK WAN-JUN,HYUNJAE-WOONG
• Format: Patent
• Language: English
• Published: 04.10.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention provides silicon nano wires, a semiconductor device including the silicon nano wires, and a method of manufacturing the silicon nano wires. The method includes: forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate, forming a first doping layer doped with a first dopant in the silicon substrate, and forming a second doping layer doped with a second dopant between the first doping layer and a surface of the silicon substrate; forming a metal layer on the silicon substrate by depositing a material which acts as a catalyst to form nano wires on the silicon substrate; forming the catalysts by heating the metal layer so that the metal layer within the microgrooves on the surface of the silicon substrate is agglomerated; and growing the nano wires between the catalysts and the silicon substrate using a thermal process.