Semiconductor device and image display apparatus

A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor including a source region, a drain region, a channel region having a predetermined channel length, an LDD region and GOLD region having an impurity concentratio...

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Bibliographic Details
Main Author TOYODA YOSHIHIKO,NAKAGAWA NAOKI,YOSHINO TARO
Format Patent
LanguageEnglish
Published 27.09.2006
Subjects
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