Semiconductor device and image display apparatus
A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor including a source region, a drain region, a channel region having a predetermined channel length, an LDD region and GOLD region having an impurity concentratio...
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Main Author | |
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Format | Patent |
Language | English |
Published |
27.09.2006
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Subjects | |
Online Access | Get full text |
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