Semiconductor device and image display apparatus

A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor including a source region, a drain region, a channel region having a predetermined channel length, an LDD region and GOLD region having an impurity concentratio...

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Bibliographic Details
Main Author TOYODA YOSHIHIKO,NAKAGAWA NAOKI,YOSHINO TARO
Format Patent
LanguageEnglish
Published 27.09.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor including a source region, a drain region, a channel region having a predetermined channel length, an LDD region and GOLD region having an impurity concentration higher than the impurity concentration of the channel region and lower than the impurity concentration of the source and drain regions, a gate insulation film, and a gate electrode. The gate electrode is formed to overlap in plane with the channel region and the GOLD region. Accordingly, a semiconductor device and an image display apparatus directed to improving source-drain breakdown voltage are obtained.
Bibliography:Application Number: CN200610068045