Semiconductor storage device having page copying function

Data read from memory cells of one page in a memory cell array that corresponds to a page address of a copy source is sensed and latched by a sense/latch circuit. The sense/latch circuit has a plurality of latch circuits, and the plurality of latch circuits is specified according to the column addre...

Full description

Saved in:
Bibliographic Details
Main Author KAWAI KOICHI,IMAMIYA KENICHI,NAKAMURA HIROSHI
Format Patent
LanguageEnglish
Published 27.09.2006
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Data read from memory cells of one page in a memory cell array that corresponds to a page address of a copy source is sensed and latched by a sense/latch circuit. The sense/latch circuit has a plurality of latch circuits, and the plurality of latch circuits is specified according to the column address. The latch circuit specified in accordance with the column address is supplied with the data to be rewritten. The latch circuit specified in accordance with its address latches the data to be rewritten, whereby rewriting of the data is performed. The data of one page after rewritten is written into the page in the memory cell array that corresponds to the page address of a copy destination.
Bibliography:Application Number: CN200610075132