Semiconductor device having electrical contact from opposite sides and method therefor

A semiconductor ( 10 ) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor ( 75, 77, 79 ), that are connected by a via or conductive region ( 52 ) and interconnect ( 68, 99 ). The via or conductive region ( 52 ) contacts a bottom surface of a di...

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Bibliographic Details
Main Author SANCHEZ HECTOR,MENDICINO MICHAEL A.,MIN BYOUNG W.,YU KATHLEEN C
Format Patent
LanguageEnglish
Published 23.08.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor ( 10 ) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor ( 75, 77, 79 ), that are connected by a via or conductive region ( 52 ) and interconnect ( 68, 99 ). The via or conductive region ( 52 ) contacts a bottom surface of a diffusion or source region ( 22 ) of the transistor and contacts a first ( 75 ) of the capacitor electrodes. A laterally positioned vertical via ( 32, 54, 68 ) and interconnect ( 99 ) contacts a second ( 79 ) of the capacitor electrodes. A metal interconnect or conductive material ( 68 ) may be used as a power plane that saves circuit area by implementing the power plane underneath the transistor rather than adjacent the transistor.
Bibliography:Application Number: CN200480020484