Neodymium doped bismuth titanate nano line array ferro-electric storage material and its synthetic method

The present invention relates to nanometer line array ferroelectric storage material of (Biú¼Nd)4Ti<3O12 (BNT) epitaxially growing in c axis on the substrate and its synthesis process. It is synthesized through selecting substrate capable of matching the lattice of BNT material, magnetically cont...

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Bibliographic Details
Main Author HAOSHUANG,HU GU
Format Patent
LanguageEnglish
Published 23.08.2006
Subjects
CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
INORGANIC CHEMISTRY
METALLURGY
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Summary:The present invention relates to nanometer line array ferroelectric storage material of (Biú¼Nd)4Ti<3O12 (BNT) epitaxially growing in c axis on the substrate and its synthesis process. It is synthesized through selecting substrate capable of matching the lattice of BNT material, magnetically controlled sputtering Au or Pt quantum dots as catalyst, compounding precursor solution containing Bi3, Nd3+ and Ti4+, and setting the precursor solution inside high pressure reactor to grow the BNT epitaxially growing in c axis under strictly controlled hydrothermal synthesis conditions. Using the nanometer line array in vertical record mode can raise the storing capacity greatly so as to reduce the device size. The ferroelectric nanometer line array is expected to substitute ferroelectric film used as storing medium.
Bibliography:Application Number: CN2006118483