Memory device including dendrimer

A memory device comprising an organic material layer between an upper electrode and a lower electrode. The organic material layer comprises a dendrimer containing at least one electron-donating group and at least one electron-accepting group. The disclosed memory device is advantageous in that it sh...

Full description

Saved in:
Bibliographic Details
Main Author LEE SANG KYUN,JOO WON JAE,KIM CHUL HEE,KANG YOON SOK
Format Patent
LanguageEnglish
Published 16.08.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A memory device comprising an organic material layer between an upper electrode and a lower electrode. The organic material layer comprises a dendrimer containing at least one electron-donating group and at least one electron-accepting group. The disclosed memory device is advantageous in that it shows a nonvolatile property, has high integration density and low power consumption characteristics, and may be inexpensively fabricated through a simple process.
Bibliography:Application Number: CN200510121569