Abrasive particles, polishing slurry, and producing method thereof

Disclosed in the invention is a polishing slurry for use in an STI CMP process, necessary for fabricating ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 mum or less), which can polish wafers at a high removal rate, having an excellent the removal selectivity of...

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Bibliographic Details
Main Author KIM DAE H.,HONG SEOK M.,KIM YONG K.,KIM DONG H.,SUH MYOUNG W.,PARK JEA G.,PAIK UN G
Format Patent
LanguageEnglish
Published 16.08.2006
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
PREPARATION OF CARBON BLACK
SEMICONDUCTOR DEVICES
TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS,TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES
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Summary:Disclosed in the invention is a polishing slurry for use in an STI CMP process, necessary for fabricating ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 mum or less), which can polish wafers at a high removal rate, having an excellent the removal selectivity of oxide compared to nitride. The polishing slurry can be applied to various patterns required in the course of producing ultra highly integrated semiconductors, and thus excellent removal rate, removal selectivity, and within-wafer-nonuniformity (WIWNU), which indicates removal uniformity, as well as minimal occurrence of micro scratches, can be assured.
Bibliography:Application Number: CN20051134775