Nonvolatile memory device including resistor and transistor

The invention relates to a nonvolatile memory device including one resistor and one transistor. The nonvolatile memory device includes the transistor; and a resistance layer electrically connected to a first impurity region and a second impurity region of the transistor.

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Bibliographic Details
Main Authors SEO DAVID, SEO SUN-AE, LEE MYOUNG-JAE, YOO IN-KYEONG
Format Patent
LanguageChinese
English
Published 24.08.2011
Subjects
ELECTRICITY
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Summary:The invention relates to a nonvolatile memory device including one resistor and one transistor. The nonvolatile memory device includes the transistor; and a resistance layer electrically connected to a first impurity region and a second impurity region of the transistor.
Bibliography:Application Number: CN200510120235