Semiconductor memory device
A semiconductor memory device wherein, in order to control the current consumed in a column address counter and latch block in a read operation, delay units disposed in the column address counter and latch block perform a shifting operation according to a signal CASP6, which is enabled in the write...
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Main Author | |
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Format | Patent |
Language | Chinese English |
Published |
15.06.2011
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor memory device wherein, in order to control the current consumed in a column address counter and latch block in a read operation, delay units disposed in the column address counter and latch block perform a shifting operation according to a signal CASP6, which is enabled in the write and read operations, and a signal WT6RD5Z, which is enabled in the write operation and disabled in the read operation. Accordingly, unnecessary current consumed in the read operation can be reduced. |
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Bibliography: | Application Number: CN20051120242 |