Headlamp

• Main Author: KATAYAMA KOJI,NAGAI YOUICHI,NAKAMURA TAKAO
• Format: Patent
• Language: English
• Published: 14.06.2006
• Subjects: ARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING ORSUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES INGENERAL; BASIC ELECTRIC ELEMENTS; BLASTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; HEATING; INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21Sand F21V, RELATING TO THEFORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THELIGHT EMITTED; INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21Sand F21V, RELATING TO USESOR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS; LIGHTING; MECHANICAL ENGINEERING; NON-PORTABLE LIGHTING DEVICES; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SYSTEMS THEREOF; TRANSPORTING; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLEEXTERIORS; VEHICLES IN GENERAL; WEAPONS

An automotive headlamp (82) is equipped with a light source containing one or more light-emitting diodes LEDs, and a base member, namely a pedestal and rear case, for securing the light source to the automobile (80). The LED includes: a GaN substrate (1); a n-type Al x Ga 1-x N layer (3) on a first main surface side of the GaN substrate (1); a p-type Al x Ga 1-x N layer (5) positioned further away from the GaN substrate (1) compared to the n-type Al x Ga 1-x N layer (3); and a multi-quantum well (4) positioned between the n-type Al x Ga 1-x N layer (3) and the p-type Al x Ga 1-x N layer (5). In this LED, the specific resistance of the GaN substrate (1) is no more than 0.5 ©·cm, the p-type Al x Ga 1-x N layer (5) side is down-mounted, and light is discharged from a second main surface (1a), which is the main surface of the GaN substrate (1) opposite from the first main surface.