Photodetector and method of manufacturing the same

The photodetector has a substrate supporting upper layers, and an epitaxial layer (103) formed on the substrate. Heavily doped two-type fingers are embedded in the layer to small depth. A well is formed in the layer disposed outside the fingers. The epitaxial layer is induced with high electric fiel...

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Bibliographic Details
Main Author KANG SHIN-JAE,KWON KYOUNG-SOO,KO JOO-YUL
Format Patent
LanguageEnglish
Published 14.06.2006
Subjects
BASIC ELECTRIC ELEMENTS
COLORIMETRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
PHYSICS
RADIATION PYROMETRY
SEMICONDUCTOR DEVICES
TESTING
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Summary:The photodetector has a substrate supporting upper layers, and an epitaxial layer (103) formed on the substrate. Heavily doped two-type fingers are embedded in the layer to small depth. A well is formed in the layer disposed outside the fingers. The epitaxial layer is induced with high electric field by the fingers. A regrown epitaxial layer for absorption of short wavelength light is formed on the fingers. An independent claim is also included for a method of manufacturing a photodetector.
Bibliography:Application Number: CN200510008484