Method for forming shallow slot isolation assembly with composite type lining

The invention provides a method for forming shallow channel isolating component with combined pad, forming a liner oxidizing layer and a silicon nitride mask on the surface of a semiconductor substrate, using the etching technique to form shallow channels, in sequence depositing a silicon nitride la...

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Bibliographic Details
Main Author RUIXING,MA JIANG
Format Patent
LanguageEnglish
Published 14.06.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention provides a method for forming shallow channel isolating component with combined pad, forming a liner oxidizing layer and a silicon nitride mask on the surface of a semiconductor substrate, using the etching technique to form shallow channels, in sequence depositing a silicon nitride layer and an in situ steam generated (ISSG) oxidizing layer, and finally filling a layer of oxide in the shallow channels, so as to form the shallow channel isolating component. The method can solve the problem of depression, reducing the distorting effect and thus improving the conductivity of the component.
Bibliography:Application Number: CN2004189391