Interconnection structure and its forming method

The present invention provides a hardmask that is located on a surface of a low k dielectric material having at least one conductive feature embedded therein. The hardmask includes a lower region of a hermetic oxide material located adjacent to the low k dielectric material and an upper region compr...

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Bibliographic Details
Main Author NGUYEN SON V.,LANE MICHAEL,GATES STEPHEN M.,LIU XIAO H.,MCGAHAY VINCENT J.,MEHTA SANJAY C.,SHAW THOMAS M
Format Patent
LanguageEnglish
Published 07.06.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides a hardmask that is located on a surface of a low k dielectric material having at least one conductive feature embedded therein. The hardmask includes a lower region of a hermetic oxide material located adjacent to the low k dielectric material and an upper region comprising atoms of Si, C and H located above the hermetic oxide material. The present invention also provides a method of fabricating the inventive hardmask as well as a method to form an interconnect structure containing the same.
Bibliography:Application Number: CN200510117378