Piezoelectric single crystal device
A piezoelectric single crystal device is provided exhibiting excellent piezoelectric properties, within a specific high-temperature range of Trrt° C. to (Trt-20)° C., where Trt represents a transformation temperature between a pseudocubic system and a tetragonal system. Specifically, the piezoelectr...
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Main Author | |
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Format | Patent |
Language | English |
Published |
31.05.2006
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Subjects | |
Online Access | Get full text |
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Summary: | A piezoelectric single crystal device is provided exhibiting excellent piezoelectric properties, within a specific high-temperature range of Trrt° C. to (Trt-20)° C., where Trt represents a transformation temperature between a pseudocubic system and a tetragonal system. Specifically, the piezoelectric single crystal device is composed of a single crystal having a composition represented by [Pb(Mg,Nb)O3](1-X).[PbTiO3](X), where X is within the range of 0.26 to 0.29 and having a complex perovskite structure, wherein a specific inductive capacity at 25° C. is 5,000 or more, and a specific inductive capacity at the transformation temperature between a pseudocubic system and a tetragonal system of the above-described single crystal is 2.5 times or more larger than the specific inductive capacity at 25° C. |
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Bibliography: | Application Number: CN200510118462 |