Dielectric multilayer of microelectronic device and method of fabricating the same

A dielectric multilayer suitable for improving a performance of a microelectronic device and a method of fabricating the dielectric multilayer are provided. The dielectric multilayer of the microelectronic device comprises a composite layer which is formed of oxides of two or more different elements...

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Bibliographic Details
Main Author WON SEOK-JUN,KWON DAE-JIN,LEE JONG-HO
Format Patent
LanguageEnglish
Published 31.05.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A dielectric multilayer suitable for improving a performance of a microelectronic device and a method of fabricating the dielectric multilayer are provided. The dielectric multilayer of the microelectronic device comprises a composite layer which is formed of oxides of two or more different elements and in which a laminar structure is not formed, and a single layer which is formed on at least one surface of the composite layer and is formed of an oxide of a single element.
Bibliography:Application Number: CN200510113817