Substrate supporting structure for semiconductor processing, and plasma processing device

A substrate supportingstructure (50) for semiconductor processing, comprising a mounting table (51) for placing a processed substrate (W) disposed in a processing chamber (20), wherein temperature control spaces (507) for storing the fluid used as a heat exchange medium are formed in the mounting ta...

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Bibliographic Details
Main Author IKEDA TARO,TANAKA SUMI,YAMAMOTO KAORU
Format Patent
LanguageEnglish
Published 12.04.2006
Subjects
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Summary:A substrate supportingstructure (50) for semiconductor processing, comprising a mounting table (51) for placing a processed substrate (W) disposed in a processing chamber (20), wherein temperature control spaces (507) for storing the fluid used as a heat exchange medium are formed in the mounting table (51), a conductive transmission path (502) is disposed to lead a high frequency power to the mounting table (51), and flow channels (505, 506) feeding or discharging the heat exchange medium fluid to or from the temperature control spaces (507) are formed in the transmission path (502).
Bibliography:Application Number: CN200380110150