Semiconductor light-emitting component and its manufacturing method

This invention provides a semiconductor light emitting element and its manufactured method, in which, the element includes a non-doped film of InxGayAlzN as the ohm layer formed between a top semiconductor material layer and a transparent conductive oxide material layer. Since the non-doped film as...

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Bibliographic Details
Main Author BAOYI,DU HUANG
Format Patent
LanguageEnglish
Published 12.04.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:This invention provides a semiconductor light emitting element and its manufactured method, in which, the element includes a non-doped film of InxGayAlzN as the ohm layer formed between a top semiconductor material layer and a transparent conductive oxide material layer. Since the non-doped film as the tunnel-through layer is rather thin, the field crossing it enables electrons to pass through the tunnel to get to the conduction band from a valence band under the forward bias voltage and go back to the transparent conductive oxide material layer and the element has a low and stable forward voltage.
Bibliography:Application Number: CN2004184922