Methods of operating magnetic random access memory device using spin injection and related devices

Methods are provided for operating a magnetic random access memory device including a memory cell having a magnetic tunnel junction structure on a substrate. In particular, a writing current pulse may be provided through the magnetic tunnel junction structure, and a writing magnetic field pulse may...

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Bibliographic Details
Main Author JEONG WONOL,KIM KI-NAM,JEONG HONG-SIK,JEONG GI-TAE,PARK JAE-HYUN
Format Patent
LanguageEnglish
Published 15.03.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:Methods are provided for operating a magnetic random access memory device including a memory cell having a magnetic tunnel junction structure on a substrate. In particular, a writing current pulse may be provided through the magnetic tunnel junction structure, and a writing magnetic field pulse may be provided through the magnetic tunnel junction structure. In addition, at least a portion of the writing magnetic field pulse may be overlapping in time with respect to at least a portion of the writing current pulse, and at least a portion of the writing current pulse and/or at least a portion of the writing magnetic field pulse may be non-overlapping in time with respect to the other. Related devices are also discussed.
Bibliography:Application Number: CN200510091996