Spin detection magnetic memory

The invention relates to a spin detection magnetic memory disposed on a semiconductor junction (103) formed by 2 adjacent zones, the first (101) and the second (102) zones having a conductivity which is respectively a first and second type; said memory comprises a first (110) and a second (120) conn...

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Bibliographic Details
Main Author SAFAROV VIATCHESLAV
Format Patent
LanguageEnglish
Published 08.03.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:The invention relates to a spin detection magnetic memory disposed on a semiconductor junction (103) formed by 2 adjacent zones, the first (101) and the second (102) zones having a conductivity which is respectively a first and second type; said memory comprises a first (110) and a second (120) connection cell disposed on the sides of said junction (103), each cell being provided with a magnetization module (111-112, 121-122). At least one of said cells comprises a polarization electrode (113, 123) on top of the magnetization module.
Bibliography:Application Number: CN200380109262