Nitride-based compound semiconductor light emitting device

A nitride-based compound semiconductor light emitting device has a first ohmic electrode, a first bonding metal layer, a second bonding metal layer and a second ohmic electrode provided in this order on a conductive substrate, and also has a nitride-based compound semiconductor layer provided on the...

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Bibliographic Details
Main Author HATA TOSHIO
Format Patent
LanguageEnglish
Published 08.03.2006
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A nitride-based compound semiconductor light emitting device has a first ohmic electrode, a first bonding metal layer, a second bonding metal layer and a second ohmic electrode provided in this order on a conductive substrate, and also has a nitride-based compound semiconductor layer provided on the second ohmic electrode. A surface of the second ohmic electrode is exposed.
Bibliography:Application Number: CN200510099610