Method for producing transistor and semiconductor device circuit

• Main Author: ZHANG HONG-YONG,UOCHI HIDEKI,TAKAYAMA TORU,TAKEMURA YASUHIKO,YAMAMOTO MUTSUO
• Format: Patent
• Language: English
• Published: 01.03.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To improve throughput by making an active region of a crystalline silicon film formed on a substrate have a catalytic element promoting more than specific crystallization and making concentration of a catalytic element of an impurity region adjacent to the active region larger than that of the active region. CONSTITUTION:A foundation film 11 of silicon oxide is formed on a substrate 10 by sputtering. Next, an amorphous silicon film is piled up to crystallize. Later, the silicon film is patterned so as to form an insular silicon region 12. Further, a silicon oxide film 14 is piled up as a gate insulating film. Then, the silicon film is patterned so as to form a gate electrode 15. Next, the silicon oxide film 14 is etched so as to activate the impurity regions 16a, 16b to crystallize. At this time, a catalytic element for crystallization is made to have larger concentration than the concentration 1X10 cm of the active region of a crystalline silicon film. Thereby, crystallization time can be shortened.