Semiconductor device and method for fabricating the same

A first doped layer of a conductivity type opposite to that of source/drain regions is formed in a semiconductor substrate under a gate electrode. A second doped layer of the conductivity type opposite to that of the source/drain regions is formed in the semiconductor substrate below the first doped...

Full description

Saved in:
Bibliographic Details
Main Author HANDA TAKATO,KURIMOTO KAZUMI
Format Patent
LanguageEnglish
Published 08.02.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A first doped layer of a conductivity type opposite to that of source/drain regions is formed in a semiconductor substrate under a gate electrode. A second doped layer of the conductivity type opposite to that of the source/drain regions is formed in the semiconductor substrate below the first doped layer. The first doped layer has a first peak in dopant concentration distribution in the depth direction. The first peak is located at a position shallower than the junction depth of the source/drain regions. The second doped layer has a second peak in dopant concentration distribution in the depth direction. The second peak is located at a position deeper than the first peak and shallower than the junction depth of the source/drain regions. The dopant concentration at the first peak is higher than that at the second peak.
Bibliography:Application Number: CN2005167671