Integrated half-bridge power circuit

A down converter includes an integrated circuit, which includes a control FET (CF) and a synchronous rectifier FET (SF). The control FET is a lateral double-diffused (LDMOS) FET, and the conductivity-type of the LDMOS FET and the conductivity-type of the substrate are of the same type.

Saved in:
Bibliographic Details
Main Author LUDIKHUIZE ADRIANUS W.,VAN DER POL JACOB,GROVER RAYMOND J
Format Patent
LanguageEnglish
Published 18.01.2006
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:A down converter includes an integrated circuit, which includes a control FET (CF) and a synchronous rectifier FET (SF). The control FET is a lateral double-diffused (LDMOS) FET, and the conductivity-type of the LDMOS FET and the conductivity-type of the substrate are of the same type.
Bibliography:Application Number: CN200380105545