Integrated half-bridge power circuit
A down converter includes an integrated circuit, which includes a control FET (CF) and a synchronous rectifier FET (SF). The control FET is a lateral double-diffused (LDMOS) FET, and the conductivity-type of the LDMOS FET and the conductivity-type of the substrate are of the same type.
Saved in:
Main Author | |
---|---|
Format | Patent |
Language | English |
Published |
18.01.2006
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A down converter includes an integrated circuit, which includes a control FET (CF) and a synchronous rectifier FET (SF). The control FET is a lateral double-diffused (LDMOS) FET, and the conductivity-type of the LDMOS FET and the conductivity-type of the substrate are of the same type. |
---|---|
Bibliography: | Application Number: CN200380105545 |