Nanodots formed on silicon oxide and method of manufacturing the same

A nanodot material including nanodots formed on silicon oxide, and a method of manufacturing the same, is provided. The nanodot material includes a substrate, a silicon oxide layer, and a plurality of nanodots on the silicon oxide layer.

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Bibliographic Details
Main Author PARK YOUNG-SOO,PARK WAN-JUN,SARANIN ALEXANDER A.,ZOTOV ANDREY V
Format Patent
LanguageEnglish
Published 18.01.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
SEMICONDUCTOR DEVICES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
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Summary:A nanodot material including nanodots formed on silicon oxide, and a method of manufacturing the same, is provided. The nanodot material includes a substrate, a silicon oxide layer, and a plurality of nanodots on the silicon oxide layer.
Bibliography:Application Number: CN200510083364