Methods of forming metal-insulator-metal (MIM) capacitors with separate seed and main dielectric layers and mim capacitors so formed

• Main Author: CHOI JAE-HYOUNG,KIM SUNG-TAE,KIM KIUL,YOO CHA-YOUNG,CHUNG JEONG-HEE,OH SE-HOON,CHOI JEONG-SIK
• Format: Patent
• Language: English
• Published: 18.01.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A metal-oxy-nitride seed dielectric layer can be formed on a metal-nitride lower electrode of a metal-insulator-metal (MIM) type capacitor. The metal-oxy-nitride seed dielectric layer can act as a barrier layer to reduce a reaction with the metal-nitride lower electrode during, for example, backend processing used to form upper levels of metallization/structures in an integrated circuit including the MIM type capacitor. Nitrogen included in the metal-oxy-nitride seed dielectric layer can reduce the type of reaction, which may occur in conventional type MIM capacitors. A metal-oxide main dielectric layer can be formed on the metal-oxy-nitride seed dielectric layer and can remain separate from the metal-oxy-nitride seed dielectric layer in the MIM type capacitor. The metal-oxide main dielectric layer can be stabilized (using, for example, a thermal or plasma treatment) to remove defects (such as carbon) therefrom and to adjust the stoichiometry of the metal-oxide main dielectric layer.