Method for fabricating semiconductor device

A method for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which impurities and crystal defects in a ferroelectric film are reduced while sustaining good ferroelectric characteristics thereof by controlling the orientation of the ferroelectric film. The me...

Full description

Saved in:
Bibliographic Details
Main Author HORII YOSHIMASA,NAKABAYASHI MASAAKI,KURASAWA MASAKI,NAKAMURA KOU,TAKAI KAZUAKI,NOSHIRO HIDEYUKI,UMEMIYA SHIGEYOSHI
Format Patent
LanguageEnglish
Published 28.12.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
TRANSMISSION
Online AccessGet full text

Cover

More Information
Summary:A method for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which impurities and crystal defects in a ferroelectric film are reduced while sustaining good ferroelectric characteristics thereof by controlling the orientation of the ferroelectric film. The method for fabricating a semiconductor device comprises a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer, characterized in that the film deposition temperature of the first film deposition process is 600 1/2 C or above.
Bibliography:Application Number: CN20038025629