Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protru...

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Bibliographic Details
Main Author SONG YOON-JONG,HWANG YOUNG-NAM,NAM SANG-DON,CHO SUNG-LAE,KOH GWAN-HYEOB,LEE CHOONG-MAN,KUH BONG-JIN,HA YONG-HO,LEE SU-YOUN,JEONG CHANG-WOOK,YI JI-HYE,RYOO KYUNGANG,LEE SE-HO,AHN SU-JIN,PARK SOON-OH
Format Patent
LanguageEnglish
Published 30.11.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
Bibliography:Application Number: CN200510074362