Methods of forming integrated circuit devices having field effect transistors of different types in different device regions

• Main Author: AHN YOUNG-JOON,PARK DONG-GUN,LEE CHOONG-HO,KANG HEE-SOO
• Format: Patent
• Language: English
• Published: 23.11.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of forming an integrated circuit device includes forming a non-planar field-effect transistor in a cell array portion of a semiconductor substrate and forming a planar field-effect transistor in a peripheral circuit portion of the semiconductor substrate. The non-planar field-effect transistor may be selected from the group of a FinFET and a recessed gate FET. Dopants may be implanted into a channel region of the non-planar field-effect transistor, and a cell protection layer may be formed on the non-planar field-effect transistor. Then, dopants may be selectively implanted into a channel region of the planar field-effect transistor using the cell protection layer as a mask to block implanting of the dopants into the channel region of the non-planar field-effect transistor.